A D-BAND POWER AMPLIFIER WITH 30-GHz BAND- WIDTH AND 4.5-DBM Psat FOR HIGH-SPEED COMMU- NICATION SYSTEM

This paper presents a D-band power amplifier for highspeed communication system. The capacitive effect of interconnection via on transistor performance at high frequency is analyzed and a new via structure is employed to reduce the capacitive effect. The on-chip matching technique for high frequency amplifier is analyzed and the thin-film microstrip line matching network is used, which is combined with biasing network to reduce RF signal loss and silicon cost. The amplifier is fabricated in 0.13-μm SiGe BiCMOS process. The experimental results show a 7 dB gain at 130 GHz with 3-dB bandwidth of 30-GHz. The input return loss is better than 10 dB over 23GHz. In addition, this amplifier achieves saturated output Received 8 June 2010, Accepted 26 July 2010, Scheduled 4 August 2010 Corresponding author: B. Zhang ([email protected]). † Also with Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), National University of Singapore, Singapore.